Mos Field Effect Transistor

K12A50D Datasheet: Silicon N Channel MOS Type (?-MOS?) Field Effect Transistor, K12A50D PDF Download Toshiba, K12A50D Datasheet PDF, Pinouts, Data Sheet, Equivalent, Schematic, Cross reference. Top view of an n -type Metal-Oxide-Semiconductor- Field-Effect-Transistor (MOSFET) The voltage applied to the gate controls the flow of electrons from the source to the drain. A positive voltage applied to the gate attracts electrons to the interface between the gate dielectric and the semiconductor. Toshiba T2N7002AK Transistor. T2N7002AKTOSHIBA Field-Effect Transistor Silicon N-Channel MOS TypeT2N7002AK○ High Speed Switchi. Understand and analyze MOS field effect transistor (MOSFET). Understand and analyze bipolar junction transistor (BJT).

Mos Field Effect Transistor Test
Mos Field Effect Transistor
Mos Field Effect Transistor Analysis

2SK3114 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK3114

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 30 W

Предельно допустимое напряжение сток-исток |Uds|: 600 V

Предельно допустимое напряжение затвор-исток |Ugs|: 30 V

Максимально допустимый постоянный ток стока |Id|: 4 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 6 ns

Выходная емкость (Cd): 115 pf

Сопротивление сток-исток открытого транзистора (Rds): 1.6 Ohm

Тип корпуса: TO-220

2SK3114 Datasheet (PDF)

0.1. 2sk3114b.pdf Size:246K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

0.2. 2sk3114.pdf Size:94K _nec

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3114SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEORDERING INFORMATIONDESCRIPTION The 2SK3114 is N-channel DMOS FET device that features aPART NUMBER PACKAGElow gate charge and excellent switching characteristics, and2SK3114 Isolated TO-220designed for high voltage applications such as switching powersupply, AC adapter.FEATURES Shareit for mac dmg free download.

8.1. Homesafe view for mac download. 2sk3117.pdf Size:260K _toshiba

2SK3117 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3117 Chopper Regulator DC-DC Converter, and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.21 (typ.) High forward transfer admittance : |Y | = 17 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DSS Enhancement-mode : Vth = 2.0~4.0 V (

8.2. 2sk3119.pdf Size:149K _sanyo

Ordering number:ENN6098AN-Channel Silicon MOSFET2SK3119Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 2.5V drive.[2SK3119]4.51.51.60.40.53 2 10.41.53.0 1 : Gate2 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25C

8.3. 2sk3116b.pdf Size:265K _renesas

8.4. 2sk3115b.pdf Size:264K _renesas

8.5. 2sk3111.pdf Size:75K _nec

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3111SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device thatPART NUMBER PACKAGEfeatures a low on-state resistance and excellent2SK3111 TO-220ABswitching characteristics, and designed for high voltage2SK3111-S TO-262applications such as DC/DC converter, actuator dr

8.6. 2sk3116.pdf Size:70K _nec

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3116SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SK3116 is N-channel DMOS FET device that features aPART NUMBER PACKAGElow gate charge and excellent switching characteristics, and2SK3116 TO-220ABdesigned for high voltage applications such as switching power2SK3116-S TO-262supply, AC adapter.2SK3116-ZJ TO-

8.7. 2sk3115.pdf Size:69K _nec

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3115SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, anddesigned for high voltage applications such as switching power supply, AC adapter.ORDERING INFORMATIONFEATURES Low gate charge PART NUMBER PACKAGEQG = 2

8.8. 2sk3110.pdf Size:67K _nec

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3110SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features alow on-state resistance and excellent switching characteristics, PART NUMBER PACKAGEand designed for high voltage applications such as DC/DC2SK3110 Isolated TO-220converter, actuator driver.FEAT

8.9. 2sk310 2sk311.pdf Size:53K _hitachi

8.10. 2sk3113.pdf Size:45K _kexin

SMD Type ICSMD Type MOSFETMOS Field Effect Transistor2SK3113FeaturesTO-252Unit: mmLow on-state resistance+0.15 +0.16.50-0.15 2.30-0.1RDS(on) =4.4 MAX. (VGS =10 V, ID =1.0 A)5.30+0.2 0.50+0.8-0.2 -0.7Low gate chargeQG = 9 nC TYP. (VDD =450 V, VGS =10 V, ID =2.0 A)0.127Gate voltage rating 30 V0.80+0.1 max-0.1Avalanche capability ratings+0.12.3 0.60-0.1 1G

8.11. 2sk3112.pdf Size:46K _kexin

SMD Type MOSFETMOS Field Effect Transistor2SK3112TO-263Unit: mmFeatures+0.24.57-0.2Gate voltage rating 30 V+0.11.27-0.1Low on-state resistanceRDS(on) = 110m MAX. (VGS =10 V, ID = 13A)Low input capacitance+0.10.1max1.27-0.1Ciss = 1600 pF TYP. (VDS =10V, VGS =0V)+0.1Avalanche capability rated 0.81-0.12.54Built-in gate protection diode1Gate+0.22.54-0

Другие MOSFET.. 2SK2648-01, 2SK2674, 2SK1065, 2SK1358, 2SK2025-01, 2SK2043LS, 2SK3053, 2SK3102-01R, IRFP260M, 2SK2219, 2SK3850, 2SK2857, 2SJ306, 2SJ72, 2SJ670, 2SJ164, 2SJ598.

Список транзисторов

Обновления

Mos Field Effect Transistor Test

Mos Field Effect Transistor

Documentation

Analog Insydes

Appendix

Model Library

Mos Field Effect Transistor Analysis

4.3.3 MOS Field-Effect Transistor

Subcircuit reference for MOSFET.

Valid values for selector are: Spice, SpiceDC, SpiceAC, and SpiceNoise. Possible parameters are described below.

Large-Signal Model

The analog behavioral model included in the Analog Insydes model library has the following port characteristics:

where G denotes the Gate, D the Drain, S the Source, and B the Bulk, respectively. The port currents can be expressed in the port variables as follows:

Equivalent schematic for the DC and transient analysis

The large-signal model includes the following model parameters:

DC related model parameters.

Area related model parameters.

Parasitic resistance related model parameters.

Junction capacitance related model parameters.

Dynamic model parameters.

Temperature related model parameters.

Noise related model parameters.

Miscellaneous model parameters.

Parameter defaults set by global options.

The automatic reduction of the model complexity controlled via the global Analog Insydes option ModelLibrary influences the following parameters:

Simplification related model parameters.

Small-Signal Model

Equivalent schematic for the AC analysis for the level 1-3 model

Equivalent schematic for the AC analysis for the BSIM model (simulator PSpice)

Equivalent schematic for the AC analysis for the BSIM model (simulator Eldo)

The small-signal model includes the following model parameters:

Level 1-3 small-signal model parameters.

Additional small-signal model parameters for BSIM PSpice.

Additional small-signal model parameters for BSIM Eldo.

The automatic reduction of the model complexity controlled via the global Analog Insydes option ModelLibrary influences the following parameters:

Simplification related level 1-3 model parameters.

Simplification related BSIM Eldo model parameters.